| PART |
Description |
Maker |
| RN6006 |
Transistor Silicon NPN Epitaxial Type (PCT Process) Motor Drive Circuit Applications Power Amplifier Applications Power Switching Applications
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
|
Toshiba Semiconductor
|
| 2SD965 |
Silicon NPN epitaxial planer type(For low-frequency power amplification) 5000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
Panasonic, Corp.
Panasonic Semiconductor
|
| 2SC1226 2SC1226A |
Silicon NPN Epitaxial Planar Type
From old datasheet system
Silicon NPN epitaxial planer type
|
PANASONIC[Panasonic Semiconductor]
|
| 2SC5505 |
Power Device - Power Transistors - General-Purpose power amplification
Silicon NPN epitaxial planar type
|
Panasonic Semiconductor
|
| MT3S06S |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
| MT3S03AU |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
|
Toshiba Semiconductor
|
| 2SC1173 |
SILICON NPN EPITAXIAL TYPE(PCT PROCESS)
SILICON NPN EPITAXIAL PLANAR TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SC3422 E000844 |
NPN EPITAXIAL TYPE (AUDIO FREQUENCY POWER AMPLIFIER/ LOW SPEED SWITCHING)
NPN EPITAXIAL TYPE (AUDIO FREQUENCY POWER AMPLIFIER, LOW SPEED SWITCHING)
From old datasheet system
|
Toshiba Semiconductor
|
| 2SC2131 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE
|
Mitsubishi Electric Corporation
|
| 2SC3018 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE
|
Mitsubishi Electric Corporation
|
| 2SC3020 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE
|
Mitsubishi Electric Corporation
|
